An Opto-Electronic HfO_<i>x</i>-Based Transparent Memristive Synapse for Neuromorphic Computing System

In this study, a transparent bilayer memristor showing both electrical and optical synapses along with good properties after annealing is presented. addition to 85% transparency, the device shows excellent characteristics for 1000 cycles of stable LRS/HRS more than 104 s retention at high temperatures. The annealed also exhibits potentiation depression 10 000 ac pulses low coefficient nonlinearity. By applying consecutive pulses, synaptic paired-pulse facilitation (PPF) spike time-dependent plasticity (STDP) are calculated. illuminated by 405 nm light source in which different intensities ranging from 20 40 mW/cm2 used achieving multilevel cell (MLC) characteristics. Learning/Forgetting curve (PSC) PPF measured mimic function. An image recognition comparison normalized loss rate < 0.1 obtained just 100 epoch trainings. These attributes make it promising candidate electrical/optical memory devices or using as an optically sensor device.